DocumentCode
947129
Title
100K uncooled GaAs m.e.s.f.e.t. amplifier as paramp replacement
Author
de los Reyes, E. ; Camargo, Emerson ; Soares, Rafael
Author_Institution
CNET, I.C.S. Department, Microwave Laboratory, Lannion, France
Volume
14
Issue
12
fYear
1978
Firstpage
378
Lastpage
379
Abstract
The characterisation, design and realisation of a low noise GaAs m.e.s.f.e.t. amplifier to replace a narrow band parametric amplifier at 1.7 GHz is described. Special measurement and analytical techniques are necessary owing to the high reflection coefficients and conditional stability of the transistor, as well as the very low noise figures being measured. A single stage amplifier is realised with a noise figure of 1.25 dB and 13.5 dB associated gain at 1.7 GHz.
Keywords
field effect transistor circuits; microwave parametric amplifiers; solid-state microwave circuits; 100K uncooled GaAs MESFET amplifier; parametric amplifiers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19780255
Filename
4242236
Link To Document