Demonstration of a 311-GHz Fundamental Oscillator Using InP HBT Technology

Author

Radisic, Vesna ; Sawdai, Donald ; Scott, Dennis ; Deal, William R. ; Dang, Linh ; Li, Danny ; Chen, John ; Fung, Andy ; Samoska, Lorene ; Gaier, Todd ; Lai, Richard

Author_Institution

Northrop Grumman Corp., Redondo Beach

Volume

55

Issue

11

fYear

2007

Firstpage

2329

Lastpage

2335

Abstract

In this paper, a sub-millimeter-wave HBT oscillator is reported. The oscillator uses a single-emitter 0.3 m15 m InP HBT device with maximum frequency of oscillation greater than 500 GHz. The passive components of the oscillator are realized in a two metal process with benzocyclobutene used as the primary transmission line dielectric. The oscillator is implemented in a common base topology due to its inherent instability. The design includes an on-chip resonator, output matching circuitry, and injection locking port. A free-running frequency of 311.6 GHz has been measured by down-converting the signal. Additionally, injection locking has been successfully demonstrated with up to 17.8 dB of injection-locking gain. This is the first fundamental HBT oscillator operating above 300 GHz.

Keywords

III-V semiconductors; bipolar integrated circuits; heterojunction bipolar transistors; indium compounds; submillimetre wave oscillators; InP - Interface; benzocyclobutene; common base topology; frequency 311 GHz; fundamental oscillator; injection locking; monolithic microwave integrated circuit; on-chip resonator; oscillator passive components; single-emitter; sub-millimeter-wave HBT oscillator; HBT; millimeter wave; monolithic microwave integrated circuit (MMIC); oscillator; sub-millimeter wave;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2007.907722

Filename

4359085