Title :
Extremely low noise InGaAs/InAlAs HEMT grown by MOCVD
Author :
Fujita, S. ; Noda, Toshio ; Hosoi, S. ; Ashizawa, Yoshito
Author_Institution :
Res. & Dev. Centre, Toshiba Corp., Kawasaki, Japan
Abstract :
MOCVD-grown InGaAs/InAlAs HEMTs with excellent noise performance comparable to that of MBE-grown devices have been successfully fabricated. A minimum noise figure lower than 0.30 dB has been obtained with an associated gain of approximately 15 dB at 12 GHz. Furthermore, devices in ceramic packages have exhibited a minimum noise figure of 0.42 dB.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device noise; solid-state microwave devices; vapour phase epitaxial growth; 0.3 dB; 0.42 dB; 12 GHz; 15 dB; HEMT; InGaAs-InAlAs; MOCVD; SHF; T-gate; ceramic packages; low noise device; minimum noise figure; noise performance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931038
