Title :
Gate current in complementary HFETs
Author :
Schuermeyer, F. ; Martinez, E. ; Shur, M. ; Grider, David
Author_Institution :
Wright Lab., WL/ELET, Wright Patterson AFB, OH
fDate :
11/1/1992 12:00:00 AM
Abstract :
Summary form only given. Gate current studies have been performed to optimize the performance of HFET (heterostructure field-effect transistor) circuits. Pseudomorphic AlxGa1-xAs/In yGa1-yAs n- and p-channel HFETs with x and y values up to 0.75 and 0.25, respectively, were studied. An analytical theory of the gate current in n- and p-channel HFETs, taking into account both thermionic emission and tunneling is presented
Keywords :
III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; indium compounds; semiconductor device models; tunnelling; AlxGa1-xAs-InyGa1-yAs; analytical theory; complementary HFET; gate current; heterostructure field-effect transistor; n-channel HFET; p-channel HFETs; thermionic emission; tunneling; FETs; Gallium arsenide; HEMTs; Laboratories; MESFETs; MODFETs; P-n junctions; Photonic band gap; Silicon carbide; Temperature sensors;
Journal_Title :
Electron Devices, IEEE Transactions on
