Title :
Analytical drain current model for a-Si:H TFTs by simultaneously considering localised deep and tail states
Author :
Kuo, J.B. ; Chen, Christopher S.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
An analytical drain current model for a-Si:H TFTs obtained by considering deep and tail states simultaneously is presented. Using an effective temperature approach, the localised deep and tail states have been considered in the DC model such that no approximations are needed. As verified by the published data, this analytical DC model provides an accurate prediction of the drain current characteristics of an a-Si:H thin film transistor.<>
Keywords :
amorphous semiconductors; deep levels; elemental semiconductors; hydrogen; insulated gate field effect transistors; semiconductor device models; silicon; thin film transistors; TFTs; amorphous Si:H; analytical DC model; drain current model; effective temperature approach; localised deep states; tail states; thin film transistor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931044
