DocumentCode
947397
Title
Analytical drain current model for a-Si:H TFTs by simultaneously considering localised deep and tail states
Author
Kuo, J.B. ; Chen, Christopher S.
Author_Institution
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Volume
29
Issue
17
fYear
1993
Firstpage
1566
Lastpage
1568
Abstract
An analytical drain current model for a-Si:H TFTs obtained by considering deep and tail states simultaneously is presented. Using an effective temperature approach, the localised deep and tail states have been considered in the DC model such that no approximations are needed. As verified by the published data, this analytical DC model provides an accurate prediction of the drain current characteristics of an a-Si:H thin film transistor.<>
Keywords
amorphous semiconductors; deep levels; elemental semiconductors; hydrogen; insulated gate field effect transistors; semiconductor device models; silicon; thin film transistors; TFTs; amorphous Si:H; analytical DC model; drain current model; effective temperature approach; localised deep states; tail states; thin film transistor;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19931044
Filename
234329
Link To Document