Title :
Impact ionisation ratio in In0.73Ga0.27As0.57P0.43
Author :
Ito, Masanori ; Kaneda, Takao ; Nakajima, Kazuo ; Toyoma, Yoshikazu ; Yamaoka, Toyoshi ; Kotani, Tsuyoshi
Author_Institution :
Fujitsu Laboratories Ltd., Kawasaki, Japan
Abstract :
A window structure InGaAsP avalanche photodiode (a.p.d.) has been fabricated by using liquid-phase epitaxy on (111B) InP. Multiplication characteristics show that the impact ionisation rate for electrons is larger than that for holes (¿>ß). The ionisation ratio ¿/ß was estimated to be 3¿4. A low-noise a.p.d. will be realised by a structure with electron-initiated multiplication.
Keywords :
III-V semiconductors; avalanche photodiodes; impact ionisation; In0.73Ga0.27As0.57P0.43; avalanche photodiode; electron initiated multiplication; impact ionisation; ionisation ratio; liquid phase epitaxy; window structure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780281
