DocumentCode
947426
Title
Low frequency noise in p/sup +/-GaAs resistors
Author
Jarrix, Sylvie ; Delseny, C. ; Pascal, F. ; Lecoy, G. ; Dangla, J.
Author_Institution
Centre d´Electron., Montpellier II Univ., France
Volume
29
Issue
17
fYear
1993
Firstpage
1571
Lastpage
1573
Abstract
The noise behaviour of p +-GaAs transmission line models (TLMs) associated with the technology of heterojunction bipolar transistors is presented. Devices of different lengths all exhibit excess noise composed of 1/f and generation-recombination noise. Noise spectra are studied as a function of different bias and different sample lengths. Contact noise is shown to be negligible. Values of the Hooge parameter alpha are extracted.<>
Keywords
III-V semiconductors; gallium arsenide; random noise; resistors; semiconductor device models; semiconductor device noise; 1/f noise; GR noise; GaAs; Hooge parameter; LF noise; bias; contact noise; generation-recombination noise; noise behaviour; noise spectra; p-type semiconductors; p/sup +/-GaAs resistors; sample lengths; transmission line models;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19931047
Filename
234332
Link To Document