• DocumentCode
    947486
  • Title

    Extremely low loss 4*4 GaAs/AlGaAs optical matrix switch

  • Author

    Hamamoto, Kiichi ; Sugou, S. ; Komatsu, Kazuhiko ; Kitamura, Masayuki

  • Author_Institution
    Opto-electron. Res. Labs., NEC Corp., Ibaraki, Japan
  • Volume
    29
  • Issue
    17
  • fYear
    1993
  • Firstpage
    1580
  • Lastpage
    1582
  • Abstract
    A 4*4 GaAs/AlGaAs optical matrix switch with an extremely low loss of 1.6 dB has been developed. This low loss switch was achieved by layer structure modification, to reduce free-carrier absorption, reduction of plasma damage while dry etching, and an improvement in the crystal quality.<>
  • Keywords
    III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; integrated optics; optical losses; optical switches; optical waveguides; 1.6 dB; 4*4 configuration; GaAs-AlGaAs; crystal quality; dry etching; free-carrier absorption; layer structure modification; low loss; optical matrix switch; photonic switching systems; plasma damage;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19931053
  • Filename
    234338
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=947486