Title :
Hole and electron currents in diffused P+-N-N+diodes and IIL structures
Author :
Roulston, D.J. ; Elsaid, M.H.
Author_Institution :
University of Waterloo, Waterloo, Ont., Canada
Abstract :
The hole current due to recombination in the N epitaxial layer is calculated and compared to the electron current injected into the diffused P region. A formula is given and results are compared with computed currents for both wide and narrow (e.g., IIL) structures, including heavy doping effects.
Keywords :
Charge carrier processes; Current density; Doping; Electrons; Epitaxial layers; Neodymium; P-i-n diodes; P-n junctions; Spontaneous emission; Substrates;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1977.10465
