Title :
Passivated millimeter-wave silicon IMPATT diodes fabricated by ion implantation
Author :
Lee, D.H. ; Weller, K.P.
Abstract :
Ion implantation has been combined with planar-mesa processing techniques to realize a passivated silicon IMPATT diode for millimeter-wavelength operation. A continuous-wave output power of 100 mW was obtained at 62 GHz from a fully passivated single-drift-region p+-n-n+structure.
Keywords :
Current measurement; Electron devices; Gain measurement; Ion implantation; Millimeter wave technology; Millimeter wave transistors; P-i-n diodes; Silicon; Testing; Voltage;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1977.10467
