DocumentCode
947580
Title
Microwave InxGa1¿xAsyP1¿y/InP f.e.t
Author
Morkoc, H. ; Andrews, J.T. ; Houng, Y.M. ; Sankaran, Ravi ; Bandy, S.G. ; Antypas, G.A.
Author_Institution
Varian Associated Inc., Corporate Solid-State Laboratory, Palo Alto, USA
Volume
14
Issue
14
fYear
1978
Firstpage
448
Lastpage
449
Abstract
Microwave performance of InxGa1¿xAsyP1¿y quaternary alloy metal-semiconductor field effect transistors (m.e.s.f.e.t.s) is reported. Liquid-phase epitaxy (l.p.e.) using a step cooling technique has been employed to grow submicrometre quaternary layers having room-temperature bandgaps of 0.9, 1.0, 1.05, 1.15 and 1.2eV. F.E.T.s having gate dimensions of 1×200 ¿m and a channel length of 5 ¿m have been fabricated using 1.15 and 1.2 eV quaternary alloys. A maximum d.c. transconductance of about 10 mS and a maximum available gain of about 7 dB at 10 GHz have been obtained.
Keywords
III-V semiconductors; Schottky gate field effect transistors; solid-state microwave devices; MESFET; liquid phase epitaxy; microwave performance; quaternary alloy; step cooling technique; transconductance;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19780300
Filename
4242579
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