Title :
LaGuerre–Gaussian Emission Properties of Photonic Quantum Ring Hole-Type Lasers
Author :
Ide, Kai ; Lee, S.E. ; Kim, Y.C. ; Kim, D.K. ; Kwon, O´Dae
Author_Institution :
Tech. Univ. Berlin, Berlin
fDate :
3/1/2008 12:00:00 AM
Abstract :
We report on the observation of LaGuerre-Gaussian (LG) beam profiles of photonic quantum ring (PQR) hole-type lasers. Naturally formed LG beams are highly valuable for optical tweezering applications, like transporting or manipulating DNA molecules. Various devices with different injection currents and hole diameters have been analyzed.
Keywords :
elemental semiconductors; gallium arsenide; photonic crystals; quantum dot lasers; radiation pressure; DNA molecules; GaAs; LaGuerre-Gaussian emission properties; hole diameters; injection current; optical tweezering; photonic quantum ring hole-type lasers; LaGuerre–Gaussian; LaGurre-Gaussian; PQR hole-type lase; PQR hole-type lasers; Photonic Quantum Ring; optical trapping; optical tweezers; photonic quantum ring;
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2007.908168
