Title :
Fabrication of low-threshold voltage micro-lasers
Author :
Scherer, Axel ; Jewell, J.L. ; Walther, M. ; Harbison, J.P. ; Florez, L.T.
Author_Institution :
Bellcore, Red Bank, NJ
fDate :
11/1/1992 12:00:00 AM
Abstract :
Summary form only given. The voltage required for threshold in vertical cavity surface emitting lasers (VCSELs) has been reduced to 1.7 V. Molecular beam epitaxy (MBE) was used to grow 30 pairs of n-doped AlGaAs/AlAs bottom mirrors and the active p-n junction with a 1-μm p-doped top contact. Twelve pairs of alternating SiO2/Si3N4 layers formed a high-reflectivity mirror which was used to complete the laser cavity. It is shown that the combination of high-reflectivity dielectric mirror layers with accurate MBE growth can be used to significantly reduce the power requirements of individual laser elements. It is expected that this advance will allow one to integrate large numbers of VCSEL devices into complex arrays without the heat-dissipation problems found in more conventional VCSEL designs. Finally, the relatively shallow depth of the active area from the semiconductor surface allows one to greatly simplify the VCSEL fabrication process
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; molecular beam epitaxial growth; semiconductor growth; semiconductor laser arrays; semiconductor lasers; 1.7 V; AlGaAs-AlAs bottom mirrors; AlGaAs-GaAs; MBE; active p-n junction; alternating SiO2-Si3N4 layers; complex arrays; high-reflectivity dielectric mirror layers; high-reflectivity mirror; laser cavity; low-threshold voltage micro-lasers; p-doped top contact; shallow active area depth; vertical cavity surface emitting lasers; Dielectrics; Mirrors; Molecular beam epitaxial growth; Optical device fabrication; P-n junctions; Power lasers; Semiconductor laser arrays; Surface emitting lasers; Threshold voltage; Vertical cavity surface emitting lasers;
Journal_Title :
Electron Devices, IEEE Transactions on
