Title :
Room-temperature pulsed operation of a 1.5-μm GaInAsP/InP vertical cavity surface emitting laser
Author :
Tadokoro, T. ; Okamoto, Hiroshi ; Kohama, Y. ; Kawakami, Tomoya ; Kurokawa, Takashi
Author_Institution :
NTT Opto-Electron. Lab., Kanagawa
fDate :
11/1/1992 12:00:00 AM
Abstract :
Summary form only given. Room-temperature operation of a current-injection near-1.55-μm GaInAsP/InP vertical-cavity surface emitting laser diode (VCSELD) was achieved. The double heterostructure was grown by metal-organic chemical vapor deposition on a (100) n-type InP substrate. The sample consisted of a 34-pair GaInAsP (λg =1.4 μm)/InP DBR, a 0.88-μm-thick undoped GaInAsP active layer, a 0.49-μm-thick InP cladding layer, a 0.22-μm-thick GaInAsP contact layer, and a p-side metal-dielectric hybrid mirror (Au/Cr and 3.5×Si/SiO2)
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; semiconductor lasers; 1.55 micron; DBR; GaInAsP active layer; GaInAsP-InP; InP cladding layer; InP substrate; VCSELD; double heterostructure; metal-organic chemical vapor deposition; p-side metal-dielectric hybrid mirror; room temperature pulsed operation; vertical-cavity surface emitting laser diode; Indium phosphide; Laser excitation; Laser modes; Mirrors; Optical pulses; Pump lasers; Quantum well lasers; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;
Journal_Title :
Electron Devices, IEEE Transactions on
