Title :
Comments on "Electron and Hole Current Characteristics of n-i-p-Type Semiconductor Quantum Dot Transistor
Author :
Nadarajah, Saralees
Author_Institution :
Manchester Univ., Manchester
Abstract :
It is pointed out that all of the four integrals used in Fujihashi et al. (see ibid., vol.6, no.3, p.320, 2007) can be reduced to closed forms involving elementary expressions.
Keywords :
field effect transistors; quantum well devices; semiconductor quantum dots; closed forms; electron current characteristics; elementary expressions; hole current of characteristics; integrals; n-i-p-type semiconductor quantum dot transistor; Integral equations; Quantum dots; Electron and hole current; Integrals; N i p type; Quantum dot transistor; integrals; n-i-p type; quantum dot transistor;
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2007.908489
