Title :
Inversion channel HFET with unity current gain frequency of 14 GHz and surface emitting laser from a single epitaxial growth
Author :
Kiely, P.A. ; Evaldsson, P.A. ; Cooke, Patrick ; Taylor, Graham W.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
Abstract :
High speed capability up to 14 GHz is reported for the inversion channel HFET using the inversion channel technology device structure. The transistor is fabricated from the same epitaxial growth and with the same fabrication technology as previously used to demonstrate the vertical cavity double heterostructure optoelectronic switching (DOES) laser.<>
Keywords :
field effect integrated circuits; integrated optoelectronics; molecular beam epitaxial growth; semiconductor lasers; 14 GHz; fabrication technology; inversion channel HFET; inversion channel technology device structure; single epitaxial growth; surface emitting laser; unity current gain frequency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931013
