• DocumentCode
    947673
  • Title

    Inversion channel HFET with unity current gain frequency of 14 GHz and surface emitting laser from a single epitaxial growth

  • Author

    Kiely, P.A. ; Evaldsson, P.A. ; Cooke, Patrick ; Taylor, Graham W.

  • Author_Institution
    AT&T Bell Labs., Holmdel, NJ, USA
  • Volume
    29
  • Issue
    17
  • fYear
    1993
  • Firstpage
    1521
  • Lastpage
    1523
  • Abstract
    High speed capability up to 14 GHz is reported for the inversion channel HFET using the inversion channel technology device structure. The transistor is fabricated from the same epitaxial growth and with the same fabrication technology as previously used to demonstrate the vertical cavity double heterostructure optoelectronic switching (DOES) laser.<>
  • Keywords
    field effect integrated circuits; integrated optoelectronics; molecular beam epitaxial growth; semiconductor lasers; 14 GHz; fabrication technology; inversion channel HFET; inversion channel technology device structure; single epitaxial growth; surface emitting laser; unity current gain frequency;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19931013
  • Filename
    234364
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=947673