Title :
Deep traps in polysilicon solar cells
Author :
Criado, A. ; Alonso, B. ; Piqueras, J.
Author_Institution :
Universidad Autónoma de Madrid, Laboratorio de Semiconductores, Departamento de FÃ\xadsica Aplicada & Instituto de FÃ\xadsica del Estado Sólido (CSIC), Madrid, Spain
Abstract :
Anomalously high values of the ideality parameter n have been found in n+¿p diffused polysilicon solar cells indicating large generation-recombination rates in the space-charge layers. Two electron traps situated at 0.46 ± 0.03 eV and 0.12 ± 0.02 eV below the conduction-band edge seem to be responsible for these large generation-recombination currents. Because the concentration profiles of both levels are very similar, both can be attributed to the same defect.
Keywords :
electron traps; solar cells; conduction band edge; defect centres; electron traps; generation recombination rates; ideality parameter; polysilicon solar cells; space charge layers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780418
