Title :
Improved C(t) method for generation rate determination in implanted MOS structures
Author_Institution :
Inst. fur Halbleiterphys. GmbH, Frankfurt, Germany
Abstract :
A method for rapidly evaluating the generation rate in the bulk of an MOS structure without requiring knowledge of the doping profile is described. The proposed technique is based on the measurement of two high frequency capacitance time transients after applying a depletion voltage step and a linear voltage ramp on the gate electrode which drives the device from depletion towards accumulation.<>
Keywords :
MOS integrated circuits; capacitance measurement; integrated circuit testing; ion implantation; metal-insulator-semiconductor structures; minority carriers; semiconductor device testing; transients; HF transients; accumulation; capacitance time transients; depletion voltage step; gate electrode; generation rate determination; high frequency; implanted MOS structures; linear voltage ramp;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931027
