DocumentCode
947829
Title
Improved C(t) method for generation rate determination in implanted MOS structures
Author
Sorge, R.
Author_Institution
Inst. fur Halbleiterphys. GmbH, Frankfurt, Germany
Volume
29
Issue
17
fYear
1993
Firstpage
1541
Lastpage
1543
Abstract
A method for rapidly evaluating the generation rate in the bulk of an MOS structure without requiring knowledge of the doping profile is described. The proposed technique is based on the measurement of two high frequency capacitance time transients after applying a depletion voltage step and a linear voltage ramp on the gate electrode which drives the device from depletion towards accumulation.<>
Keywords
MOS integrated circuits; capacitance measurement; integrated circuit testing; ion implantation; metal-insulator-semiconductor structures; minority carriers; semiconductor device testing; transients; HF transients; accumulation; capacitance time transients; depletion voltage step; gate electrode; generation rate determination; high frequency; implanted MOS structures; linear voltage ramp;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19931027
Filename
234379
Link To Document