Device performance of submicrometre MESFETs with LTG passivation

Author

Yin, L. -W ; Nguyen, N.X. ; Kiziloglu, K. ; Ibbetson, J.P. ; Gossard, A.C. ; Mishra, U.K.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

29

Issue

17

fYear

1993

Firstpage

1550

Lastpage

1551

Abstract

The device characteristics of a submicrometre GaAs MESFET with low-temperature-grown GaAs passivation are reported. The fabricated device has a high gate-drain breakdown voltage of over 20 V with a maximum drain current of 340 nA/mm and a transconductance of 200 mS/mm. Microwave measurement of the device yields a cutoff frequency of 32 GHz, and an unusually high maximum frequency of oscillation of 110 GHz. These combined characteristics demonstrate the potential of the device as a viable power amplifier in the millimetre-wave frequency range.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; electric breakdown of solids; gallium arsenide; passivation; solid-state microwave devices; 110 GHz; 20 V; 200 mS; 32 GHz; 340 mA; EHF; GaAs; GaAs passivation; MM-wave device; cutoff frequency; device characteristics; gate-drain breakdown voltage; low-temperature-grown; maximum frequency of oscillation; millimetre-wave frequency range; power amplifier; submicrometre MESFETs; submicron MESFET; transconductance;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19931033

Filename

234385