DocumentCode
947906
Title
1.3 μm InAsyP1-y -InP strained-layer quantum-well laser diodes grown by metalorganic chemical vapor deposition
Author
Kasukawa, Akihiko ; Namegaya, Takeshi ; Fukushima, Tom ; Iwai, Norihiro ; Kikuta, Toshio
Author_Institution
Furukawa Electric Co., Ltd., Yokohama, Japan
Volume
29
Issue
6
fYear
1993
fDate
6/1/1993 12:00:00 AM
Firstpage
1528
Lastpage
1535
Abstract
The authors have fabricated 1.3-μm InAsP-InP separate-confinement-heterostructure (SCH) strained-layer double-quantum-well (SL-DQW) laser diodes (LDs) by metalorganic chemical vapor deposition (MOCVD). A low threshold current density of 410 A/cm 2 was obtained. The CW threshold current was as low as 1.8 mA at 20°C, and maximum CW operating temperature of 120°C was obtained. These characteristics are almost the same as those of well-designed GaInAsP-InP SL-QW LDs. Further improvement of the characteristics of InAsP-InP LDs is expected by optimizing the device structure
Keywords
III-V semiconductors; indium compounds; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; 1.3 micron; 1.8 mA; 120 degC; 20 degC; CW threshold current; IR; InAsP-InP; LDs; MOCVD; double-quantum-well; laser structure optimisation; low threshold current density; maximum CW operating temperature; metalorganic chemical vapor deposition; separate-confinement-heterostructure; strained-layer quantum-well laser diodes; Chemical vapor deposition; Conducting materials; Diodes; Indium phosphide; Lattices; MOCVD; Quantum well lasers; Strain measurement; Temperature; Threshold current;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/3.234387
Filename
234387
Link To Document