Compressively strained 1.3 μm InAsP/InP and GaInAsP/InP multiple quantum well lasers for high-speed parallel data transmission systems

Author

Fukushima, Tom ; Kasukawa, Akihiko ; Iwase, Masayuki ; Namegaya, Takeshi ; Shibata, Mitsuyoshi

Author_Institution

Furukawa Electric Co. Ltd., Yokohama, Japan

Volume

29

Issue

6

fYear

1993

fDate

6/1/1993 12:00:00 AM

Firstpage

1536

Lastpage

1543

Abstract

Turn-on delay times in the pulse response of compressively strained InAsP/InP double-quantum-well (DOW) lasers and GaInAsP/InP multiple-quantum-well (MQW) lasers emitting at 1.3 μm were investigated. DQW lasers with 200-μm cavity length and high-reflection coating achieved both a very low threshold current (1.8 mA) and a small turn-on delay time (200 ps), even under a biasless 30-mA pulse current. Compressively strained or lattice-matched GaInAsP MQW lasers and GaInAsP double-heterostructure (DH) lasers were also fabricated and compared. It was observed that the carrier lifetime was enhanced for InAsP DQW lasers and strained GaInAsP MQW lasers compared to the lattice-matched GaInAsP MQW lasers and conventional double-heterostructure lasers. To explain this increase in the carrier lifetime, the effect of the carrier transport on the carrier lifetime was studied. The additional power penalty due to the laser turn-on delay was simulated and is discussed

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical communication equipment; semiconductor lasers; 1.3 micron; 1.8 mA; 200 micron; 200 ps; 30 mA; DOW; GaInAsP-InP; IR; InAsP-InP; MQW; OC equipment; carrier lifetime; carrier transport; cavity length; compressively strained; computer networks; double-heterostructure; double-quantum-well; high-reflection coating; high-speed parallel data transmission systems; laser turn-on delay; lattice-matched; low threshold current; multiple quantum well lasers; optical communications equipment; power penalty; pulse current; pulse response; turn-on delay times; Charge carrier lifetime; Coatings; DH-HEMTs; Delay effects; Indium phosphide; Optical pulses; Power lasers; Pulse compression methods; Quantum well devices; Threshold current;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.234388

Filename

234388