Title :
n-channel inversion-mode InP m.i.s.f.e.t.
Author :
Lile, D.L. ; Collins, D.A. ; Meiners, L.G. ; Messick, L.
Author_Institution :
Naval Ocean Systems Center, Electronic Material Sciences Division, San Diego, USA
Abstract :
Capacitance/voltage and m.i.s.f.e.t. inversion-mode f.e.t. data are reported for p-type InP. It is shown that the surface of this material appears to be inverted at zero gate bias and that good inversion-mode (normally-off) device behaviour is possible.
Keywords :
III-V semiconductors; insulated gate field effect transistors; MISFET inversion mode FET data; capacitance/gate voltage curves; output characteristics; p-type InP;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780441
