Title :
Low-frequency noise in ideal GaAs Schottky-barrier diodes
Author :
Sisson, M.J. ; Hansom, A.M. ; Grant, Alex J. ; White, Amanda M. ; Day, B.
Author_Institution :
General Electric Company Ltd., Hirst Research Centre, Wembley, UK
Abstract :
Large-area Schottky diodes have been made on epitaxial GaAs produced by liquid-phase, alkyl and trichloride-vapour-phase techniques. D.L.T.S. transient-capacitance experiments failed to detect electron traps in the material in each case. A very low level of low-frequency excess noise was found in diodes with ideal current/voltage characteristics, but devices with excess current at low bias were noisier.
Keywords :
Schottky-barrier diodes; electron device noise; electron traps; GaAs Schottky barrier diodes; current/voltage characteristics; deep level transient spectroscopy transient capacitance experiments; epitaxial GaAs; low frequency noise; noise temperature ratio;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780444
