High-speed InGaAs/InP composite collector bipolar transistors

Author

Feygenson, A. ; Hamm, R.A. ; Ritter, Daniel ; Smith, Peter ; Montgomery, R.K. ; Yadvish, R.D. ; Temkin, H.

Author_Institution

AT&T Bell Labs., Murray Hill, NJ

Volume

39

Issue

11

fYear

1992

fDate

11/1/1992 12:00:00 AM

Firstpage

2658

Abstract

Summary form only given. The authors describe a composite collector bipolar transistor structure capable of high-speed and high breakdown voltage (BV_CEO). The structure uses a composite collector of InGaAs and InP. f_T=120 GHz at V_CE=1.5 V at a current density of 77 kA/cm² were obtained. The breakdown voltage BV_CEO is greater than 5 V, and the output conductance is essentially independent of the collector voltage. Microwave transistors with an emitter size of 3×10 μm² were fabricated by a self-aligned process. Microwave measurements were made from 100 MHz to 40 GHz as a function of the collector current and V_CE. The authors have also fabricated and tested transimpedance amplifiers based on the composite collector transistors

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; solid-state microwave devices; 1.5 V; 100 MHz to 40 GHz; 120 GHz; 26 GHz; 5 V; InGaAs-InP; collector voltage; composite collector bipolar transistors; current density; cutoff frequency; high breakdown voltage; high-speed; microwave transistors; output conductance; self-aligned process; transimpedance amplifiers; Bandwidth; Bipolar transistors; Epitaxial growth; Gain; Indium gallium arsenide; Indium phosphide; Microwave transistors; Planarization; Substrates; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.163520

Filename

163520