Electron transport in thin-base InP/InGaAs HBTs

Author

Lundstrom, Mark S. ; Dodd, Paul E. ; Lovejoy, M.L. ; Harmon, E.S. ; Melloch, M.R. ; Keyes, Brian M. ; Hamm, R.A. ; Ritter, Daniel

Author_Institution

Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN

Volume

39

Issue

11

fYear

1992

fDate

11/1/1992 12:00:00 AM

Firstpage

2658

Lastpage

2659

Abstract

Summary form only given. A computational and experimental study of electron transport in p⁺-InGaAs is described. Monte Carlo simulations are in good accord with recent experiments in InP/InGaAs HBTs (heterojunction bipolar transistors), but to further test the microscopic model, zero-field, time-of-flight studies were also conducted. The Monte Carlo simulations reveal that the base transit time is strongly influenced by small amounts of carrier scattering. The base transit time varies approximately as W²_B even when most of the electrons cross the base ballistically. Clear ballistic behavior is observed only when the base width is a small fraction of the mean free path

Keywords

III-V semiconductors; Monte Carlo methods; carrier mobility; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device models; HBTs; InP-InGaAs; Monte Carlo simulations; ballistic behavior; base transit time; carrier scattering; electron transport; heterojunction bipolar transistors; mean free path; microscopic model; zero field time of flight studies; Bandwidth; Bipolar transistors; Electrons; Epitaxial growth; Gain; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Microwave transistors; Substrates;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.163521

Filename

163521