Title :
Electron transport in thin-base InP/InGaAs HBTs
Author :
Lundstrom, Mark S. ; Dodd, Paul E. ; Lovejoy, M.L. ; Harmon, E.S. ; Melloch, M.R. ; Keyes, Brian M. ; Hamm, R.A. ; Ritter, Daniel
Author_Institution :
Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN
fDate :
11/1/1992 12:00:00 AM
Abstract :
Summary form only given. A computational and experimental study of electron transport in p+-InGaAs is described. Monte Carlo simulations are in good accord with recent experiments in InP/InGaAs HBTs (heterojunction bipolar transistors), but to further test the microscopic model, zero-field, time-of-flight studies were also conducted. The Monte Carlo simulations reveal that the base transit time is strongly influenced by small amounts of carrier scattering. The base transit time varies approximately as W2B even when most of the electrons cross the base ballistically. Clear ballistic behavior is observed only when the base width is a small fraction of the mean free path
Keywords :
III-V semiconductors; Monte Carlo methods; carrier mobility; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device models; HBTs; InP-InGaAs; Monte Carlo simulations; ballistic behavior; base transit time; carrier scattering; electron transport; heterojunction bipolar transistors; mean free path; microscopic model; zero field time of flight studies; Bandwidth; Bipolar transistors; Electrons; Epitaxial growth; Gain; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Microwave transistors; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
