High-speed InP/InGaAs p-n-p heterojunction bipolar transistors

Summary form only given. The authors report InP/InGaAs p-n-p HBTs (heterojunction bipolar transistors), grown by metal-organic molecular beam epitaxy (MOMBE) and demonstrate large current gain and high speed. A transistor with an emitter dimension of 3×8 gmm² had a common emitter current gain of 30 at a collector current density of 2×10⁴ A/cm². Microwave on-wafer measurements were done to characterize the small-signal performance of the transistors. The unity gain cutoff frequency f_T was 12 GHz and the inferred maximum oscillation frequency f_max was 20 GHz, at a collector current of 2.5 mA and a collector-to-emitter voltage of 5.0 V