High-speed GaAs/AlGaAs multiple-quantum-well lasers: design and characterization

Author

Esquivias, Ignacio ; Weisser, Stefan ; Ralston, J.D. ; Gallagher, Dominic F. G. ; Larkins, E.C. ; Tasker, P.J. ; Rosenzweig, J. ; Fleissner, J.

Author_Institution

Fraunhofer-Inst. fuer Angewandte Festkorperphys., Freiburg

Volume

39

Issue

11

fYear

1992

fDate

11/1/1992 12:00:00 AM

Firstpage

2660

Lastpage

2661

Abstract

Summary form only given. The authors have developed GaAs/AlGaAs multiple-quantum-well (MQW) lasers with direct modulation bandwidths of 16 GHz. The devices utilize a compact vertical layer structure which also makes them particularly suitable for integration. The theoretical calculations leading to this optimized design as well as the DC and high-frequency characteristics of the lasers are discussed. A 3-dB electrical modulation bandwidth of 16 GHz was achieved at 90-mA pulsed bias in a 4-μm×200-μm device. The slope of the plot of the resonance frequency versus the square root of the optical power yielded values of dg/dn ranging between 4×10^-16 and 7×10 ^-16 cm² for short-cavity-length and narrow-mesa-width lasers

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; semiconductor lasers; 16 GHz; DC characteristics; GaAs-AlGaAs; compact vertical layer structure; direct modulation bandwidths; high speed MQW lasers; high-frequency characteristics; integration; multiple-quantum-well lasers; narrow-mesa-width lasers; optimized design; resonance frequency; short-cavity-length; Bandwidth; Design optimization; Gallium arsenide; Laser theory; Optical design; Optical pulses; Pulse modulation; Quantum well devices; Resonance; Resonant frequency;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.163524

Filename

163524