Title :
Reduction of linewidth enhancement factor in InGaAsP-InP modulation-doped strained multiple-quantum-well lasers
Author :
Kano, Fumiyoshi ; Yamanaka, Takayuki ; Yamamoto, Mitsuo ; Yoshikuni, Yuzo ; Mawatari, Hiroyasu ; Tohmori, Yuichi ; Yamamoto, Manabu ; Yokoyama, Kiyoyuki
Author_Institution :
Opto-electronics Labs., NTT, At, Kanagawa, Japan
fDate :
6/1/1993 12:00:00 AM
Abstract :
The linewidth enhancement factor α in InGaAsP-InP modulation-doped strained multiple-quantum-well (MQW) lasers has been evaluated theoretically and experimentally. A reduction of the α-parameter due to modulation doping is demonstrated. A small α-parameter of less than 1 is obtained not at wavelength for the gain peak but within certain range of wavelength where the gain is positive. The smaller α-parameter in modulation-doped strained MQW lasers should result in performance improvements that are advantageous for optical communication system applications
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical communication equipment; optical modulation; semiconductor lasers; spectral line breadth; α-parameter; InGaAsP-InP; MQW lasers; gain peak; linewidth enhancement factor; modulation doping; modulation-doped strained multiple-quantum-well lasers; optical communication system applications; performance improvements; Chirp; Distributed Bragg reflectors; Distributed feedback devices; Epitaxial layers; Laser feedback; Laser theory; Laser tuning; Optical feedback; Quantum well devices; Semiconductor lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
