Low-threshold tensile-strained InGaAs-InGaAsP quantum-well lasers with single-step separate-confinement heterostructures

Author

Yamamoto, Tsuyoshi ; Nobuhara, Hiroyuki ; Tanaka, Kazuhiro ; Odagawa, Tetsufumi ; Sugawara, Mitsuru ; Fujii, Takuya ; Wakao, Kiyohide

Author_Institution

Fujitsu Lab. Ltd., Atsugi, Japan

Volume

29

Issue

6

fYear

1993

fDate

6/1/1993 12:00:00 AM

Firstpage

1560

Lastpage

1564

Abstract

The authors studied tensile-strained InGaAs-InGaAsP quantum-well lasers with single-step separate-confinement heterostructures (SCH). They obtained threshold currents below 2 mA at 20°C and below 10 mA at 100°C with indium mole fractions of 0.3 and 0.35 in the active layers. They found that the poorer carrier confinement of the longer wavelength SCH layer lowered the characteristic temperature at high temperatures. A laser with two In_0.35Ga_0.65As wells and a 1.1-μm composition InGaAsP SCH layer produced a 1.6-mA CW threshold current at 20°C and lasing at 120°C. Using this laser, very short lasing delays under zero-bias current over a wide temperature range and 2 Gb/s modulation under zero-bias current at 70°C were achieved

Keywords

III-V semiconductors; gallium arsenide; indium compounds; optical modulation; semiconductor lasers; 1.1 micron; 1.6 mA; 10 mA; 100 degC; 120 degC; 2 mA; 20 degC; 70 degC; CW threshold current; In mole fractions; InGaAs-InGaAsP; SCH; active layers; carrier confinement; characteristic temperature; high temperatures; low threshold laser diodes; quantum-well lasers; short lasing delays; single-step separate-confinement heterostructures; tensile-strained; wide temperature range; zero-bias current; Carrier confinement; Delay; High speed optical techniques; Indium phosphide; Photonic band gap; Quantum well lasers; Semiconductor lasers; Temperature dependence; Temperature distribution; Threshold current;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.234406

Filename

234406