Title :
Low-threshold tensile-strained InGaAs-InGaAsP quantum-well lasers with single-step separate-confinement heterostructures
Author :
Yamamoto, Tsuyoshi ; Nobuhara, Hiroyuki ; Tanaka, Kazuhiro ; Odagawa, Tetsufumi ; Sugawara, Mitsuru ; Fujii, Takuya ; Wakao, Kiyohide
Author_Institution :
Fujitsu Lab. Ltd., Atsugi, Japan
fDate :
6/1/1993 12:00:00 AM
Abstract :
The authors studied tensile-strained InGaAs-InGaAsP quantum-well lasers with single-step separate-confinement heterostructures (SCH). They obtained threshold currents below 2 mA at 20°C and below 10 mA at 100°C with indium mole fractions of 0.3 and 0.35 in the active layers. They found that the poorer carrier confinement of the longer wavelength SCH layer lowered the characteristic temperature at high temperatures. A laser with two In0.35Ga0.65As wells and a 1.1-μm composition InGaAsP SCH layer produced a 1.6-mA CW threshold current at 20°C and lasing at 120°C. Using this laser, very short lasing delays under zero-bias current over a wide temperature range and 2 Gb/s modulation under zero-bias current at 70°C were achieved
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical modulation; semiconductor lasers; 1.1 micron; 1.6 mA; 10 mA; 100 degC; 120 degC; 2 mA; 20 degC; 70 degC; CW threshold current; In mole fractions; InGaAs-InGaAsP; SCH; active layers; carrier confinement; characteristic temperature; high temperatures; low threshold laser diodes; quantum-well lasers; short lasing delays; single-step separate-confinement heterostructures; tensile-strained; wide temperature range; zero-bias current; Carrier confinement; Delay; High speed optical techniques; Indium phosphide; Photonic band gap; Quantum well lasers; Semiconductor lasers; Temperature dependence; Temperature distribution; Threshold current;
Journal_Title :
Quantum Electronics, IEEE Journal of
