Room-temperature operation of MOCVD-grown GaInAs/InP strained-layer multiquantum-well lasers in the 1.8-μm range

Author

Forouhar, S. ; Larsson, A. ; Ksendzov, A. ; Lang, Robert J.

Author_Institution

Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA

Volume

39

Issue

11

fYear

1992

fDate

11/1/1992 12:00:00 AM

Firstpage

2662

Abstract

Summary form only given. The authors report the first successful room-temperature pulsed operation of InGaAs strained-layer multiquantum-well (SL-MQW) injection lasers grown by MOVPE (metal-organic vapor-phase epitaxy) on InP substrates in the 1.8-μm range. The threshold current density and external differential quantum efficiency of 10-μm-wide ridge waveguide lasers were 2.5 kA/cm² and 5% for 1-mm and 400-μm-long cavities, respectively. The laser structure consists of four 35-Å-wide In_0.75Ga_0.25As SL-QWs separated by 65-Å-wide barrier layers of lattice-matched InGaAs. The MQW is further sandwiched between 150 nm of InGaAsP (λ=1.3 μm) and 2 μm of InP on both sides

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser transitions; optical waveguides; semiconductor lasers; vapour phase epitaxial growth; 1.8 micron; 5 percent; GaInAs-InP; InP substrates; MOCVD-grown; MOVPE; MQW; external differential quantum efficiency; injection lasers; lattice-matched InGaAs; metal-organic vapor-phase epitaxy; multiquantum-well lasers; ridge waveguide lasers; room-temperature pulsed operation; semiconductor lasers; strained-layer; threshold current density; Epitaxial growth; Epitaxial layers; Indium gallium arsenide; Indium phosphide; Optical pulses; Pulsed laser deposition; Quantum well devices; Substrates; Threshold current; Waveguide lasers;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.163527

Filename

163527