Title :
Observation of stripe-direction dependence of threshold current density for AlGaInP laser diodes with CuPt-type natural superlattice in Ga0.5In0.5P active layer
Author :
Fujii, Hiromitsu ; Ueno, Yukiko ; Gomyo, A. ; Endo, Kazuhiro ; Suzuki, Takumi
Author_Institution :
NEC Corp., Tukuba
fDate :
11/1/1992 12:00:00 AM
Abstract :
Summary form only given. The authors report the observation of a large stripe-direction dependence of threshold current density for AlGaInP laser diodes with CuPt-type natural superlattice (NSL) in a Ga 0.5In0.5P active layer. The anisotropy is attributed to the existence of NSL in the active layer. Epitaxial wafers were grown on Si-doped exact (001) GaAs substrate by low-pressure metal-organic vapor-phase epitaxy (MOVPE)
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium compounds; indium compounds; semiconductor lasers; vapour phase epitaxial growth; (001) substrate; AlGaInP-Ga0.5In0.5P; CuPt-type natural superlattice; Ga0.5In0.5P active layer; GaAs:Si substrate; MOVPE; anisotropy; epitaxial wafers; laser diodes; low pressure VPE; metal-organic vapor-phase epitaxy; stripe-direction dependence; threshold current density; Diode lasers; Gas lasers; Indium gallium arsenide; Indium phosphide; Laser modes; Quantum well lasers; Space technology; Substrates; Threshold current; Waveguide lasers;
Journal_Title :
Electron Devices, IEEE Transactions on
