Title :
On carrier injection and gain dynamics in quantum well lasers
Author :
Tessler, Nir ; Eistenstein, G.
Author_Institution :
Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel
fDate :
6/1/1993 12:00:00 AM
Abstract :
A detailed carrier dynamics model for quantum well lasers is presented. The model describes the transport of carriers using full continuity equations and the gain by rate equations for each well separately, and it also takes into account electron-hole interactions which modify the energy band structure. To this end, the model includes Poisson and Schrodinger equations. The model is solved in steady state where it yields nonuniform carrier distributions along the crystal growth axis. Dynamically, the model is solved in the time domain, yielding the evolution of carriers in time and space and highlighting a new effect, photon-assisted carrier transport. The model is also solved in the small-signal regime where the phase lag in gain between wells is determined
Keywords :
Schrodinger equation; band structure of crystalline semiconductors and insulators; band theory models and calculation methods; carrier mobility; laser theory; semiconductor device models; semiconductor lasers; Poisson equations; Schrodinger equations; carrier dynamics model; carrier injection; carrier transport; crystal growth axis; electron-hole interactions; energy band structure; full continuity equations; gain dynamics; laser gain; nonuniform carrier distributions; phase lag; photon-assisted carrier transport; quantum well lasers; rate equations; semiconductors; small-signal regime; steady state; time domain; Carrier confinement; Laser modes; Photonic crystals; Poisson equations; Pump lasers; Quantum well lasers; Semiconductor optical amplifiers; Steady-state; Stimulated emission; Thermionic emission;
Journal_Title :
Quantum Electronics, IEEE Journal of