Title :
Low-threshold GaInAsSb/AlGaAsSb quantum-well ridge-waveguide lasers emitting at 2.1 μm
Author :
Choi, H.K. ; Eglash, S.J. ; Connors, M.K.
Author_Institution :
MIT, Lincoln Lab., Lexington, MA
fDate :
11/1/1992 12:00:00 AM
Abstract :
Summary form only given. The authors report on a laser structure consisting of the following layers grown on an n-GaSb substrate by molecular beam epitaxy: n-GaSb buffer, n-AlGaAsSb cladding, active consisting of GaInAsSb wells and AlGaAsSb barriers, p-AlGaAsSb cladding, and p+-GaSb contacting. Ridges 8-μm wide were defined by reactive ion etching. For CW operation of a 300-μm-long device at a heat-sink temperature of 20°C, the threshold current is 29 mA and the maximum power is 12.5 mW/facet limited by junction heating. Initial slope efficiency is ~0.1 W/A per facet. Fundamental-mode emission is maintained up to 200 mA, with lateral full width at half maximum (FWHM) of 15°. For the transverse far-field pattern, the FWHM is ~50°. The emission spectra show multiple longitudinal modes at ~2.13 μm
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium antimonide; laser modes; laser transitions; molecular beam epitaxial growth; optical waveguides; semiconductor lasers; 2.1 micron; 20 degC; 29 to 200 mA; CW operation; GaInAsSb-AlGaAsSb; GaSb contacting layer; GaSb substrate; MBE; RIE; fundamental mode emission; heat-sink temperature; molecular beam epitaxy; multiple longitudinal modes; n-type substrate; quantum-well; reactive ion etching; ridge-waveguide lasers; semiconductor lasers; threshold current; Anisotropic magnetoresistance; Diode lasers; Gas lasers; Laser modes; Laser radar; Polarization; Quantum well lasers; Tellurium; Temperature; Threshold current;
Journal_Title :
Electron Devices, IEEE Transactions on
