Title :
1.3 μm multiquantum well decoupled confinement heterostructure (MQW-DCH) laser diodes
Author :
Hausser, S. ; Meier, H.P. ; Germann, R. ; Harder, Ch S.
Author_Institution :
Zurich Res. Lab., IMB, Ruschlikon, Switzerland
fDate :
6/1/1993 12:00:00 AM
Abstract :
A 1.3-μm multi-quantum-well decoupled confinement heterostructure (MQW-DCH) laser diode has been developed. This structure introduces internal barriers between the active quantum wells and the optical waveguide. It is thus possible to have, at the same time, deep quantum wells to prevent carrier leakage and a strong optical waveguide with a high confinement factor. The barrier parameters have been optimized using numerical modeling tools, and the DCH laser diode has been built using chemical beam epitaxy. The broad-area transparency current density is 140 A-cm-2, the internal efficiency is 0.83, the waveguide loss is 5 cm-1. and T0 = 62 K. Ridge waveguide laser diodes have a room temperature threshold of 8 mA and an efficiency of 0.32 mW/mA
Keywords :
carrier mobility; laser theory; optical losses; optical waveguide theory; semiconductor device models; semiconductor lasers; 1.3 micron; 8 mA; IR; MQW; active quantum wells; barrier parameters; broad-area transparency current density; carrier leakage; chemical beam epitaxy; deep quantum wells; heterostructure; high confinement factor; internal barriers; internal efficiency; laser diodes; multiquantum well decoupled confinement; numerical modeling tools; optical waveguide; room temperature threshold; waveguide loss; Carrier confinement; Chemical lasers; Diode lasers; Epitaxial growth; Laser beams; Molecular beam epitaxial growth; Numerical models; Optical waveguides; Quantum well devices; Semiconductor process modeling;
Journal_Title :
Quantum Electronics, IEEE Journal of
