Title :
Ion-implanted p¿n junction indium-phosphide impatt diodes
Author :
Berenz, J.J. ; Fank, F.B. ; Hierl, T.L.
Author_Institution :
Varian Associates, Corporate Research Laboratory, Palo Alto, USA
Abstract :
Implantation of beryllium ions into a uniformly doped n-type InP epitaxial layer grown by vapour-phase epitaxy has been utilised to create a p+¿n junction for flat-profile single-drift impatt diodes. An r.f. performance comparable to gallium arsenide has been obtained. A c.w. output power of 1.6 W with 11.1% conversion efficiency has been measured at 9.78 GHz and a peak power of 6.1 W with 13.7% efficiency has been measured at 10.8 GHz with 10% duty cycle. The f.m. noise of the c.w. oscillators is comparable to results reported for silicon.
Keywords :
III-V semiconductors; IMPATT diodes; beryllium; indium compounds; semiconductor epitaxial layers; 10.8 GHz; 9.78 GHz; Be ions; CW output power; DC properties; FM noise; IMPATT diodes; InP; RF properties; conversion efficiency; epitaxial layer; flat profile single drift; ion implanted p-n junction; p+-n junction;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780461
