• DocumentCode
    948184
  • Title

    Implanted Si m.o.s.f.e.t.s for high-speed applications

  • Author

    Niggebr¿¿gge, U. ; Tsironis, Christos ; Filensky, W. ; Balk, P. ; Beneking, H.

  • Author_Institution
    Technical University of Aachen, Institute of Semiconductor Electronics, Aachen, West Germany
  • Volume
    14
  • Issue
    21
  • fYear
    1978
  • Firstpage
    690
  • Lastpage
    691
  • Abstract
    Si m.o.s.f.e.t.s with a channel length of 0.8 ¿m have been fabricated using boron implantation to adjust the threshold voltage. With microwave design appropriate to keeping the parasitics small, fmax values between 10 and 12 GHz are realised also with ion implantation. Large-signal switching times of 48 ps, small-signal switching times of 44 ps and delay times of 50 ps have been achieved.
  • Keywords
    boron; insulated gate field effect transistors; ion implantation; silicon; solid-state microwave devices; Si:B; delay times; insulated gate field effect transistors; ion implantation; signal switching times; solid state microwave devices; threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19780465
  • Filename
    4242661
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=948184