Very low chirping of InGaAs-InGaAlAs MQW DFB BRS lasers under 10 Gbit/s modulation

Author

Blez, Monique ; Mathoorasing, Dean ; Kazmierski, Christophe ; Quillec, Maurice ; Gilleron, Marc ; Landreau, Jean ; Nakajima, Hisao

Author_Institution

CNET, Bagneux, France

Volume

29

Issue

6

fYear

1993

fDate

6/1/1993 12:00:00 AM

Firstpage

1676

Lastpage

1681

Abstract

The ability of the InGaAs/InGaAlAs multi-quantum-well (MQW) system to achieve ultra-low-chirp operation under 10-Gb/s operation is experimentally demonstrated. The MQW active layer has been grown by a solid-source molecular beam epitaxy (MBE) method. Two metalorganic chemical vapor deposition (MOCVD) regrowths were used to fabricate the distributed-feedback (DFB) buried ridge structure (BRS) lasers. DFB BRS lasers with good static and spectral performance have been obtained. Under 10-Gb/s modulation those lasers exhibited a chirp value as low as 0.11 nm at -20 dB, which is attributed to an extremely small phase-amplitude coupling coefficient of 1.8. An analysis of the AM and FM modulated laser field under digital pseudorandom signal confirms the observed spectra and shows the possibility of an optimum spectrum width for lasers with small chirping

Keywords

III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; indium compounds; molecular beam epitaxial growth; optical communication equipment; optical modulation; semiconductor lasers; 10 Gbit/s; InGaAs-InGaAlAs multiple quantum well distributed feedback lasers; MQW active layer; amplitude modulation; buried ridge structure lasers; chirp value; digital pseudorandom signal; frequency modulation; metalorganic chemical vapor deposition regrowths; modulation; phase-amplitude coupling coefficient; solid-source molecular beam epitaxy; spectral performance; ultra-low-chirp operation; Chemical lasers; Chemical vapor deposition; Chirp modulation; Indium gallium arsenide; MOCVD; Molecular beam epitaxial growth; Optical coupling; Phase modulation; Quantum well devices; Signal analysis;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.234420

Filename

234420