• DocumentCode
    948248
  • Title

    Numerical simulation of a forward-biased p-i-n structure with band-to-band Auger recombination

  • Author

    Freidin, B. ; Velmre, E.

  • Author_Institution
    Tallinn Polytechnic Institute, Electronics Department, Tallinn, USSR
  • Volume
    14
  • Issue
    22
  • fYear
    1978
  • Firstpage
    701
  • Lastpage
    703
  • Abstract
    A modification of the iterative scheme of Seidman and Choo is described. The proposed method is suited for the modelling of processes in semiconductor structures including Auger recombination. Some results of calculations are given.
  • Keywords
    Auger effect; electron-hole recombination; iterative methods; p-n junctions; Seidman and Choo; band to band Auger recombination; electrons and hole equation; forward biased p-i-n structure; iterative scheme; mobilities; modelling; numerical simulation; semiconductor structures;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19780473
  • Filename
    4242673
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=948248