A new buried-channel EEPROM device

Author

Hu, Ya ; White, Marvin H.

Author_Institution

Sherman Fairchild Center, Lehigh Univ., Bethlehem, PA

Volume

39

Issue

11

fYear

1992

fDate

11/1/1992 12:00:00 AM

Firstpage

2670

Abstract

Summary form only given. A buried-channel polysilicon-oxide-nitride-oxide-silicon (BC SONOS) device structure is described with improved electrical characteristics for high-density nonvolatile semiconductor memories (NVSMs). Compared to the conventional SONOS device the WRITE is performed from an accumulation layer where, for the same oxide electric field, there is a large number of carriers available for the tunneling current. The WRITE speed is improved by an order of magnitude in this new device structure over the conventional SONOS device due to the increase in the supply of carriers. The BC SONOS NVSM provides a reduced oxide electric field in the retention mode to suppress the back-tunneling of stored charge, thereby improving the memory retention. Other interesting features of this device include the minimization of Si/SiO₂ interface trap formation, which improves the endurance due to the extended ERASE/WRITE cycling

Keywords

EPROM; accumulation layers; semiconductor-insulator-semiconductor structures; tunnelling; SONOS device; Si-SiO₂-Si₃N₄-SiO₂-Si; WRITE speed; accumulation layer; buried-channel EEPROM device; electrical characteristics; high-density nonvolatile semiconductor memories; interface trap formation; memory retention; oxide electric field; retention mode; tunneling current; Circuit testing; Dielectrics; EPROM; Feedback circuits; Implants; Inverters; Logic circuits; Logic devices; SONOS devices; Waveguide transitions;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.163541

Filename

163541