Title :
A new failure mechanism and its improvement on gate oxide reliability at field edge by LOCOS isolation
Author :
Takahashi, Masaharu ; Uchida, Hironaga ; Nagatomo, Yoshiki ; Hirashita, N. ; Ino, M.
Author_Institution :
Oki Electric Industry Co. Ltd., Tokyo
fDate :
11/1/1992 12:00:00 AM
Abstract :
Summary form only given. A new failure mechanism of gate oxide at the field oxide edge by LOCOS isolation has been found. The gate oxide reliability is degraded by the buildup of positive charges in addition to the thinning. Both effects can be reduced by a high-temperature annealing after gate oxidation and wet gate oxidation
Keywords :
annealing; failure analysis; insulated gate field effect transistors; oxidation; reliability; semiconductor technology; LOCOS isolation; failure mechanism; field edge; gate oxidation; gate oxide reliability; high-temperature annealing; positive charge build-up; wet gate oxidation; Circuit testing; Dielectrics; Failure analysis; Feedback circuits; Implants; Inverters; Logic circuits; Logic devices; SONOS devices; Waveguide transitions;
Journal_Title :
Electron Devices, IEEE Transactions on
