Title :
Modulation Scheme Analysis for High-Efficiency Three-Phase Buck-Type Rectifier Considering Different Device Combinations
Author :
Ben Guo ; Wang, Fei Fred ; Burgos, Rolando ; Aeloiza, Eddy
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Tennessee, Knoxville, TN, USA
Abstract :
The three-phase buck-type rectifier features a step-down ac-dc conversion function, smaller filter size, inrush current limiting capability, and potential for high efficiency, where its switching loss is dependent on the modulation scheme and the specific semiconductors used. In this paper, three different device combinations are compared through experiments on their switching characteristics for the buck rectifier application. It is shown that the switching performance of two series-connected devices becomes worse than a single device due to the superposition of the nonideal semiconductor characteristics. Moreover, the switching loss in the commutation between two switches is usually higher than the one in the commutation between a switch and the freewheeling diode. Taking into consideration both types of commutations, the switching loss of the buck rectifier is then modeled and the analytical equations are derived for four space vector modulation schemes. According to the analysis, each modulation scheme has its own field for high-efficiency application. The most advantageous modulation scheme is identified in this paper for each of the device combinations investigated.
Keywords :
AC-DC power convertors; rectifiers; analytical equations; device combinations; filter size; freewheeling diode; high-efficiency three-phase buck-type rectifier; inrush current limiting capability; semiconductor characteristics; series-connected devices; space vector modulation schemes; step-down ac-dc conversion function; switching characteristics; switching loss; Insulated gate bipolar transistors; Modulation; Rectifiers; Schottky diodes; Switches; Switching loss; Vectors; Buck rectifier; Reverse Blocking IGBT; high efficiency; modulation; reverse blocking insulated-gate bipolar transistor (IGBT);
Journal_Title :
Power Electronics, IEEE Transactions on
DOI :
10.1109/TPEL.2014.2364582