Title :
Power n-MOSFET design for a 40-V 192-element thermal ink jet IC
Author :
Hawkins, W.G. ; Burke, C.J. ; Watrobski, T.E. ; Tellier, T.A. ; Verdonckt-Vandebroek, S. ; Chow, T.P.
Author_Institution :
Xerox Corp., Webster, NY
fDate :
11/1/1992 12:00:00 AM
Abstract :
Summary form only given. A silicon-based thermal ink jet (TIJ) printhead which produces high-speed, laser-quality printing with a 300 spot per inch resolution has been designed, fabricated, and tested. The 5-V addressing logic, 13-V predriver circuitry, 40-V power MOSFET switches, and 192-drop ejectors are integrated on a single chip, and controlled by only seven external connections. The authors discuss the specific TIJ process and device design tradeoffs, especially focusing on the 40-V smart-power MOSFETs, and illustrate them with 2-D numerical modeling and experimental device data
Keywords :
ink jet printers; insulated gate field effect transistors; mixed analogue-digital integrated circuits; power integrated circuits; power transistors; semiconductor device models; thermal printers; 192-drop ejectors; 192-element thermal ink jet IC; 2D numerical modelling; 40 V; addressing logic; laser-quality printing; power MOSFET switches; power nMOSFET design; predriver circuitry; printhead; smart-power MOSFETs; Circuit testing; Ink; Logic circuits; Logic devices; MOSFET circuits; Optical design; Power MOSFET; Printing; Switches; Switching circuits;
Journal_Title :
Electron Devices, IEEE Transactions on
