A 10-GHz bandwidth pseudomorphic GaAs/InGaAs/AlGaAs MODFET-based OEIC receiver

Author

Ketterson, Andrew ; Seo, Ja-Won ; Tong, Michael ; Nummila, K. ; Kang, Sung-Mo ; Cheng, K.Y. ; Adesida, I.

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL

Volume

39

Issue

11

fYear

1992

fDate

11/1/1992 12:00:00 AM

Firstpage

2676

Lastpage

2677

Abstract

Summary form only given. High-performance quarter-micrometer pseudomorphic modulation-doped field-effect transistors (MODFETs) and a metal-semiconductor-metal (MSM) photodetector have been used in the design of a 0.85-μm wavelength sensitive high-speed OEIC (optoelectronic integrated circuit) lightwave receiver. The receiver circuit utilizes a transimpedance amplifier topology with all active components including a variable active feedback resistor consisting of a common-gate FET. Discrete MODFETs with -0.7-V thresholds exhibit transconductances of over 500 mS/mm and f_Ts of ~70 GHz. Receiver transimpedance gains (Z_T) from 200 to 1500 Ω are obtained by varying the active feedback resistor. An amplifier 3-dB analog bandwidth of 10 GHz is measured with a maximally flat Z_T response of 300 Ω, resulting in a transimpedance-bandwidth product of 3 THz-Ω. The receiver frequency response, deduced from optical pulse measurements, confirms a 10-GHz bandwidth and indicates that the receiver is suitable for unequalized 18-Gb/s NRZ communications

Keywords

III-V semiconductors; aluminium compounds; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; integrated optoelectronics; optical receivers; photodetectors; 0.25 micron; 0.85 micron; 10 GHz; 18 Gbit/s; 500 mS; 70 GHz; GaAs-InGaAs-AlGaAs; MODFETs; MSM photodetector; NRZ communications; OEIC lightwave receiver; common-gate FET; cutoff frequency; optical pulse measurements; pseudomorphic modulation-doped field-effect transistors; transconductances; transimpedance amplifier topology; transimpedance gains; transimpedance-bandwidth product; variable active feedback resistor; Bandwidth; FETs; Gallium arsenide; HEMTs; Indium gallium arsenide; MODFET circuits; MODFET integrated circuits; Optical amplifiers; Optical receivers; Resistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.163552

Filename

163552