Title :
Electrical properties of laser-annealed donor-implanted GaAs
Author :
Sealy, B.J. ; Kular, S.S. ; Stephens, K.G. ; Croft, R. ; Palmer, A.
Author_Institution :
University of Surrey, Department of Electronic and Electrical Engineering, Guildford, UK
Abstract :
A Q-switched ruby laser has been used to anneal GaAs implanted with selenium or tellurium ions. Electron concentrations in the range 1¿2 × 1019 cm¿3 were measured for samples implanted at room temperature or 200°C with a dose of 1¿5 × 1015 ions cm¿2. High electrical activities were obtained both with and without Si3N4 coatings.
Keywords :
III-V semiconductors; annealing; carrier density; gallium arsenide; ion implantation; selenium; semiconductor doping; tellurium; GaAs; Q-switched ruby laser; Rutherford backscattering; Si3N4 coatings; electrical properties; electron concentrations; laser annealed donor implanted; selenium; tellurium ions;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780484
