• DocumentCode
    948400
  • Title

    Successful Alloy Attachment of GaAs MMIC´s

  • Author

    Pavio, Jeanne S

  • Volume
    35
  • Issue
    12
  • fYear
    1987
  • fDate
    12/1/1987 12:00:00 AM
  • Firstpage
    1507
  • Lastpage
    1511
  • Abstract
    Alloy attachment of GaAs monolithic circuits was examined after initial reflow, after environmental bake, and after a stepped series of thermal cycles from 200 to 1000 cycles (-55 to + 125°C). The variety of solders tested included both pastes and preforms. Monolithic assemblies alloyed with these solders were evaluated for changes in physical properties as well as for changes in electrical performance. It was noted during the study that via fractures due to thermal expansion differences between the alloy and the GaAs monolithic device were a common occurrence and could become an inherent reliability risk. Based on this evidence, an investigation relating the frequency of fracturing to the size and the shape of the vias was undertaken. Results led to the development of processing parameters which could minimize and control fracture occurrence.
  • Keywords
    Circuits; Gallium arsenide; Gold; Impedance; Intermetallic; Preforms; Radio frequency; Testing; Thermal expansion; Tin;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/TMTT.1987.1133882
  • Filename
    1133882