DocumentCode
948400
Title
Successful Alloy Attachment of GaAs MMIC´s
Author
Pavio, Jeanne S
Volume
35
Issue
12
fYear
1987
fDate
12/1/1987 12:00:00 AM
Firstpage
1507
Lastpage
1511
Abstract
Alloy attachment of GaAs monolithic circuits was examined after initial reflow, after environmental bake, and after a stepped series of thermal cycles from 200 to 1000 cycles (-55 to + 125°C). The variety of solders tested included both pastes and preforms. Monolithic assemblies alloyed with these solders were evaluated for changes in physical properties as well as for changes in electrical performance. It was noted during the study that via fractures due to thermal expansion differences between the alloy and the GaAs monolithic device were a common occurrence and could become an inherent reliability risk. Based on this evidence, an investigation relating the frequency of fracturing to the size and the shape of the vias was undertaken. Results led to the development of processing parameters which could minimize and control fracture occurrence.
Keywords
Circuits; Gallium arsenide; Gold; Impedance; Intermetallic; Preforms; Radio frequency; Testing; Thermal expansion; Tin;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1987.1133882
Filename
1133882
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