DocumentCode
948435
Title
C.W. modelocking of a GaInAsP diode laser
Author
Glasser, L.A.
Author_Institution
Massachusetts Institute of Technology, Research Laboratory of Electronics, Department of Electrical Engineering & Computer Science, Cambridge, USA
Volume
14
Issue
23
fYear
1978
Firstpage
725
Lastpage
726
Abstract
Active c.w. modelocking of a GaInAsP double-heterostructure laser diode operating in an external cavity is reported. 18 ps pulses (f.w.h.m.) are obtained at a repetition rate of 2.1 GHz and a lasing wavelength of 1210 nm. The pulses were measured by autocorrelation using s.h.g. in LiIO3. They are the shortest pulses ever reported for a c.w. laser diode.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; laser modes; semiconductor junction lasers; 2.1 GHz; CW modelocking; GaInAsP diode laser; LiIO3; SHG; autocorrelation; double heterostructure laser diode; external cavity; pulses; repetition rate;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19780489
Filename
4242700
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