AlGaInP strained multiple-quantum-well visible laser diodes (λL⩽630 nm band) with a multiquantum barrier grown on misoriented substrates

Optimization of the misorientation angle of GaAs substrates to prepare multiple quantum wells (MQWS) and multiple quantum barriers (MQBs) with abrupt barrier-well interfaces is reported. The characteristics of AlGaInP strained MQW laser diodes incorporating an MQB grown on misoriented substrates are also investigated, with the aim of developing high-performance 630-nm laser diodes. MQW and MQB with homogeneous periodicity and abrupt barrier-well interfaces were obtained using (100)GaAs substrates with a misorientation of 9° in the [011] direction. AlGaInP compressively strained MQW laser diodes which incorporated an MQB oscillating in the 630-nm band showed a maximum operating temperature (T_max) 30°C higher than that for laser diodes without an MQB. Those diodes have been operating reliably for more than 3000 h under 5 mW at 50°C. Threshold current of 115 mA at 20°C was achieved for laser diodes oscillating at 615 nm