Title :
High temperature (74°C) CW operation of 634 nm InGaAlP laser diodes utilizing a multiple quantum barrier
Author :
Rennie, John ; Okajima, Masaki ; Watanabe, Minoru ; Hatakoshi, Gen-ichi
Author_Institution :
Toshiba Corp., Kawasaki, Japan
fDate :
6/1/1993 12:00:00 AM
Abstract :
A modified multiple-quantum-barrier structure has been applied to a 630-nm-band laser diode. The result is a laser exhibiting a maximum operating temperature of 74°C and a threshold current of 49 mA. These characteristics correspond to a 22°C increase in the operating temperature and over a 50% decrease in the threshold current, in comparison to an identical laser without a multiple quantum barrier. This is the first time, to the authors´ knowledge, that a significant decrease in the threshold current of a laser has been directly attributed to the influence of a multiple quantum barrier
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser beams; semiconductor lasers; 49 mA; 634 nm; 74 degC; CW operation; InGaAlP; multiple quantum barrier; operating temperature; semiconductor; threshold current; Capacitive sensors; Diode lasers; Gas lasers; Laser theory; Photonic band gap; Semiconductor lasers; Standards development; Temperature; Tensile strain; Threshold current;
Journal_Title :
Quantum Electronics, IEEE Journal of
