DocumentCode :
948513
Title :
Important loss mechanisms in visible lasers revealed by hydrostatic pressure
Author :
Hawley, M. ; Adams, A.R. ; Silver, M. ; Reilly, E. P O ; Valster, A.
Author_Institution :
Dept. of Phys., Surrey Univ., Guildford, UK
Volume :
29
Issue :
6
fYear :
1993
fDate :
6/1/1993 12:00:00 AM
Firstpage :
1885
Lastpage :
1888
Abstract :
It is found that above 10 kbar, the effect of pressure on the threshold current of visible lasers is to increase losses to the X minima in the barriers. Below 10 kbar the threshold current remains relatively constant with pressure. By monitoring the lasing wavelength, the pressure dependence of the direct band gap of ordered GaInP has been measured to be 7 meV/kbar. Considerations of the effect of strain in the active region of a laser suggest that increases in Ith for tensile strained visible lasers as a function of increasing strain are due to losses from the Γ minimum to X minima in the well. Similar increases in Ith observed at high compressive strains can be explained by the reduction in well width, and hence optical confinement factor, which is necessary to maintain the same operating wavelength as the strain is increased
Keywords :
III-V semiconductors; gallium compounds; indium compounds; laser beams; optical losses; semiconductor lasers; Γ minimum; 10 kbar; GaInP; X minima; active region; direct band gap; hydrostatic pressure; lasing wavelength; operating wavelength; optical confinement factor; pressure dependence; semiconductors; strain effect; tensile strained visible lasers; threshold current; visible lasers; well width; Capacitive sensors; Gallium arsenide; Laser theory; Photonic band gap; Pressure measurement; Quantum well lasers; Silver; Substrates; Temperature; Threshold current;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.234449
Filename :
234449
Link To Document :
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