Title :
Increasing the effective barrier height of Schottky contacts to n¿InxGa1¿xAs
Author :
Morgan, D.V. ; Frey, Jesse
Author_Institution :
Cornell University, School of Electrical Engineering, Ithaca, USA
Abstract :
In this letter it is shown that thin interfacial oxide layers may be used to increase the effective barrier height of Au/InP and Au/InGaAs Schottky barriers. These results confirm earlier studies on InP and extend the technique to InGaAs.
Keywords :
III-V semiconductors; Schottky effect; gallium arsenide; gold; indium compounds; semiconductor-metal boundaries; Au-InGaAs; Au-InP; Schottky contacts; effective barrier height; n-InxGa1-xAs; thin interfacial oxide layers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780499
