• DocumentCode
    948534
  • Title

    Increasing the effective barrier height of Schottky contacts to n¿InxGa1¿xAs

  • Author

    Morgan, D.V. ; Frey, Jesse

  • Author_Institution
    Cornell University, School of Electrical Engineering, Ithaca, USA
  • Volume
    14
  • Issue
    23
  • fYear
    1978
  • Firstpage
    737
  • Lastpage
    739
  • Abstract
    In this letter it is shown that thin interfacial oxide layers may be used to increase the effective barrier height of Au/InP and Au/InGaAs Schottky barriers. These results confirm earlier studies on InP and extend the technique to InGaAs.
  • Keywords
    III-V semiconductors; Schottky effect; gallium arsenide; gold; indium compounds; semiconductor-metal boundaries; Au-InGaAs; Au-InP; Schottky contacts; effective barrier height; n-InxGa1-xAs; thin interfacial oxide layers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19780499
  • Filename
    4242731
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=948534